摘要
氧化锌(ZnO)是直接宽带隙半导体材料,有高达60 meV的激子束缚能,是下一代短波长光电材料的潜在材料。有效的p型ZnO薄膜掺杂是实现ZnO基光电器件的基础,虽然取得一定的进展,但从性能上来看,远远不及n型ZnO薄膜,而且重复性差。分析难于实现氧化锌p型掺杂的主要原因,综述近年来出现的p型掺杂的新方法、掺杂机制及其有效的实现工艺,指出今后的发展趋势和研究重点。
Zinc oxide （ZnO） is considered to be the next generation shorter wavelength semiconductor because of wide band gap and 60 meV exciton binding energy. Researches indicate that n-type ZnO films can be well prepared because of unipolarity of ZnO caused by the intrinsic donor defects. But how to realize p-type ZnO films through doping is the key step, this is due to the high self-compensating process on doping derived from the donor defects and lacking of shallow acceptor doping with smaller solubility. This paper summarized completely the doping mechanism and the effective preparing technology of p-type ZnO films.
出处
《兵器材料科学与工程》
CAS
CSCD
2009年第3期99-104,共6页
Ordnance Material Science and Engineering
基金
广西高校百名中青年学科带头人资助计划项目(RC20060809014)
