摘要
通过离子注入及中子嬗变掺杂制备了Ga(镓)掺杂^(70)Ge(锗)纳米晶,并对样品进行了质子激发X射线荧光分析谱(PIXE)、光致发光谱(PL)、激光拉曼散射谱(LRS)的测量与研究。结果表明:随着Ga杂质浓度的增加,580 nm附近的荧光峰的发光强度不断地下降,这可能是非辐射的俄歇复合过程与纳米晶数量的减少共同作用的结果。此外,从PL上面看到580nm附近的荧光峰蓝移则可能是由纳米晶尺寸的减小和非辐射的俄歇复合过程引起的。
Gallium-doped ^70Ge nanocrystals were prepared by ^70Ge ions implantation and neutron trans-mutation doping. Then, the samples were studied by PIXE,PL and Raman spectra. It is concluded that the non-radiative Auger recombination process and the amount reduce of the nanocrystals probably lead to the decrease in relative intensity of the peak around 580 nm. With the increase of Ga-acceptors concentration, the high-energy shift of the peak around 580 nm may be attributed to decrease of the nanocrystals size and the non-radiative Auger recombination process.
出处
《四川大学学报（自然科学版）》
CAS
CSCD
北大核心
2009年第3期756-760,共5页
Journal of Sichuan University(Natural Science Edition)
基金
国家自然科学基金委员-中国工程物理研究院联合基金(10376020)
关键词
Ge纳米晶
中子嬗变掺杂
光致发光
激光拉曼散射
Ge nanocrystals, neutron transmutation doping, photoluminescence, laser Raman scattering
