摘要
CoolMOS具有优越的直流特性。为了设计出一个600V CoolMOS结构,首先CoolMOS的结构入手,结合电荷平衡理论,分析了其高击穿电压BV、低导通电阻Ron的原理。通过理论计算,得到相关的设计参数,并结合TCAD软件对Cool-MOS的多个参数(外延参数、注入剂量、单胞尺寸、推阱时间)进行了优化。最终得到击穿电压为630 V,特征导通电阻RonA仅为12.5 mΩ.cm-2的CoolMOS结构,器件特性大大优于传统功率MOSFET。
CoolMOS has been proved to have excellent DC characteristics. In order to design a 600 V Cool- MOS structure, the structure of CoolMOS and the charge balance theory was used for analyzing the principle of high BV and low Ron. Relative design parameter was get through theoretical calculations, several parameters of the CoolMOS structure （EPI parameter, implantation dose, cell size,diffusion time）have been optimized by the simulation of TCAD software. Finally, we got the CoolMOS structure while the BV of the structure was 630 V and the Rosa of the structure was only 12.5 mΩ·cm^-2. Characteristics of devices was greatly better than conventional power MOSFET.
出处
《电子器件》
CAS
2009年第2期296-299,305,共5页
Chinese Journal of Electron Devices
