摘要
考虑ZnO优秀的物理和化学性能以及由于生长温度低而具有更低的缺陷密度从而易于实现高的光电器件效率等特点,本文采用射频磁控溅射和金属有机化学汽相沉积(MOCVD)方法在石英及蓝宝石衬底上生长了立方结构MgZnO薄膜,制备了MgZnO的MSM型紫外探测器。该器件实现了在日盲(太阳盲)波段的光响应,典型的光响应峰值分别在225和250 nm,截止边为230和273 nm。
Mgx Zn1-x O is a promising material for developing solar-blind ultraviolet （UV） photodetectors. However, the control of the MgZnO quality and the phase separation with increase of Mg in Mgx Zn1-x O alloy is still a difficult problem. Up to now, no reports that the cutoff wavelength is at 273 nm have been found for the photodetectors based on MgZnO films. In this paper, cubic Mgx Zn1-x O thin films are grown on quartz and sapphire substrates by Radio Frequency （RF） magnetron sputtering and Metal Organic Chemical Vapour Deposition （MOCVD）. The Metal-Semiconductor-Metal （MSM） structured MgZnO photodetectors are fabricated based on the films. Results from spectral analysis shows that the photodetector exhibits a peak response wavelength at 225 nm with a cutoff wavelength of 230 nm, and the cubic phase MgZnO alloy with 255 nm absorption edge is finished by LP-MOCVD and the MSM devices exhibit the peak energy at 250 nm with cutoff wavelength of 273 nm, which lies in the solar-blind spectrum range（220 -280 nm）.
出处
《中国光学与应用光学》
2008年第1期80-84,共5页
Chinese Optics and Applied Optics Abstracts
基金
国家自然科学基金重点项目(No.50532050)
中国科学院知识创新工程重要方向项目(KJCX3.SYW.W01)
国家重点基础研究发展计划973计划课题(2006CB04906
2008CB317105)
关键词
MgZnO薄膜
射频磁控溅射
金属有机化学汽相沉积
日盲紫外探测器
MgZnO thin film
Radio Frequency （RF） magnetron sputtering
Metal Organic Chemical Vapour Deposition（MOCVD）
solar-blind ultraviolet photodetector
