摘要
本文采用低压金属有机化学气相沉积系统(LP-MOCVD)生长出Mg掺杂压应变分别限制多量子阱结构的AlGaInP/GaInP 660 nm LD外延材料,制作出腔长1000μm、条宽150μm的宽面半导体激光器。采用选择性Zn扩散在管芯两端面区制作出透明窗口结构来提高器件的腔面光灾变阈值(COD)。透明窗口结构激光器最大连续输出功率为3.7 W,是正常结构的激光器COD饱和功率的4.4倍。激光器的特征温度T0为68 K,热阻为4.6 K/W。在热沉温度为20℃时进行了500 mW恒功率老化,老化时间为1000 h。
High performance Mg doped p-cladding layer compressive strain separated confinement double quantum wells AlGaInP/GaInP laser diodes were fabricated by low-pressure metal-organic chemical vapor deposition technology. Window-structure fabricated on two end faces by selective Zn diffusion is adopted, which is useful for avoiding catastrophic optical mirror damage. High power output is realized in such laser with window structure. The mesa width and the cavity length for a laser diode are 150 μm and 1000 μm respectively. Under a continuous-wave operation at room temperature of 25 ℃, the maximum output power of the laser diode with window structure reaches 3.7 W, which is 4.4 times higher than the ordinary value of 0.83 W. A high characteristic temperature of 68 K and a low thermal resistance of 4.6 K/W were obtained. Reliable operation of 1000 h at a constant power 500 mW and 20 ℃ （ Cu heat sink） were shown.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
2009年第3期597-601,共5页
Journal of Synthetic Crystals
