摘要
文章采用水热法合成SnS2、SnS纳米晶体,用浸涂法制备了相应薄膜及其太阳能电池。用XRD和TEM分析了纳米晶体的晶型和颗粒形貌,用SEM对SnS2薄膜进行了表征,测量了SnS2、SnS薄膜的UV-Vis、UV-Vis-NIR吸收性能。结果表明,所制备的SnS2、SnS颗粒分别呈球形和片状结构且结晶性良好,SnS2薄膜的直接带隙为2.6 eV、间接带隙为2.2 eV,SnS薄膜的直接带隙为1.2 eV,间接带隙为1.0 eV,得到的SnS2/SnS薄膜太阳能电池的短路电流密度为1.1μA/cm2,开路电压为25 mV。
The SnS2 and SnS nanoparticles were prepared via the hydrothermal method, and the SnSz/ SnS thin film solar ceils were prepared by the dip-coating technique using the synthesized nanopartieles. The phase and morphology of the nanoparticles were characterized by XRD and TEM, respectively,the SnS2 thin film was characterized by SEM, and the UV-Vis and UV-Vis-NIR absorption properties of SnS2 and SnS thin film were measured. It was found that SnS2 and SnS nanopartieles were with good crystalline, and the SnS2 particles were spheric and the SnS particles had the shape of irregular plates. The direct and indirect band gaps of SnS2 thin film were 2.6 eV and 2.2 eV, respectively and those of SnS thin film were 1.2 eV and 1.0 eV, respectively. The solar cells produced a short circuit photoeurrent density of 1.1 μA/cm^2 and an open circuit voltage of 25 inV.
出处
《合肥工业大学学报（自然科学版）》
CAS
CSCD
北大核心
2009年第6期826-828,856,共4页
Journal of Hefei University of Technology：Natural Science
基金
国家重点基础研究发展计划资助项目(2006CB202600)
