摘要
本文简明报道了氩离子刻蚀XPS深度剖析中氩离子诱发的二氧化铈还原反应现象及其随离子刻蚀时间的变化规律,并对其机理进行了讨论分析。
The reduction of ceria induced by argon ion beam used for etching and its change as a function of etching time in XPS depth profilingand the relevant mechanism were discussed.
关键词
XPS
二氧化铈
氩离子
还原反应
XPS depth profiling ceria argon ion reductive reaction
