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Influence of O_2/Ar ratio on the properties of transparent conductive niobium-doped ZnO films 被引量:1

Influence of O_2/Ar ratio on the properties of transparent conductive niobium-doped ZnO films
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摘要 Niobium-doped ZnO transparent conductive films are deposited on glass substrates by radio frequency sputtering at 300℃.The influence of O2/Ar ratio on the structural,electrical and optical properties of the as-deposited films is investigated by X-ray diffraction,Hall measurement and optical transmission spectroscopy.The lowest resistivity of 4.0×10-4Ω·cm is obtained from the film deposited at the O2/Ar ratio of 1/12.The average optical transmittance of the films is over 90%. Niobium-doped ZnO transparent conductive films are deposited on glass substrates by radio frequency sputtering at 300℃. The influence of O2/Ar ratio on the structural, electrical and optical properties of the as-deposited films is investigated by X-ray diffraction, Hall measurement and optical transmission spectroscopy. The lowest resistivity of 4.0×10^-4Ω· cm is obtained from the film deposited at the O2/Ar ratio of 1/12. The average optical transmittance of the films is over 90%.
出处 《Chinese Science Bulletin》 SCIE EI CAS 2009年第13期2217-2220,共4页
基金 Supported by the High-Tech Research and Development Program of China(Grant Nos.2007AA06Z112,2007AA03Z446) Research Fund for the Doctoral Program of Higher Education of China(Grant No.20060183030) Science and Technology Office of Jilin Province(Grant No.20070709) Bureau of Science and Technology of Changchun City(Grant No.2007107)
关键词 ZNO薄膜 透明导电 光学性能 铌掺杂 Hall测量 射频溅射 玻璃基板 薄膜沉积 semiconductors, electrical properties, thin films, transparent conductive oxides, sputtering
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