摘要
通过１．０６μｍ连续激光和脉冲激光联合破坏ＧａＡｓ材料的实验研究，给出了ＧａＡｓ材料在三种不同的连续激光功率密度辐照下，所需脉冲激光的破坏阈值，结果表明，联合破坏时所需脉冲激光的破坏阈值小于单独使用脉冲激光的破坏阈值。根据轴对称二维热模型，计算了三种情况下连续激光辐照时ＧａＡｓ材料的表面温度分布曲线及表面辐照中心处温升随辐照时间的关系，并估算了其后作用的脉冲激光对材料的温升，对实验及计算结果进行了分析，并着重比较了联合破坏方式和单独破坏方式的优缺点。
The pulse laser damage thresholds of GaAs target irradiated by three different CW laser power density were given after the experimental investigation on the combined damage of the GaAs target with 1.06μm CW and pulse laser irradiation. The results show that combined damage thresholds were less than the separate ones. The surface temperature distributions and temperature rise at the surface center caused by CW laser irradiation were calculated according to two-dimension heat transfer equation. In the end, the experimental and calculated results were analysed, with the emphasis on the comparision of combined damage and separate damage.
出处
《强激光与粒子束》
EI
CAS
CSCD
北大核心
1998年第2期217-220,共4页
High Power Laser and Particle Beams
基金
国家863激光技术领域资助
