期刊文献+

用于恶劣环境的耐高温压力传感器(英文) 被引量:4

High temperature pressure sensor for harsh environment
下载PDF
导出
摘要 为了解决如高温200℃等恶劣环境下的压力测量问题,基于微机电系统(MEMS)和高能氧离子注入(SIMOX)技术,研制了一种量程为0~120kPa的压阻式压力传感器。该传感器芯片由硅基底、薄层二氧化硅、惠斯登电桥结构的硼离子注入层、氮化硅应力匹配层、钛-铂-金梁式引线层和由湿法刻蚀形成的空腔组成。在氧剂量1.4×1018/cm2和注入能量200keV条件下,由高能氧离子注入技术形成厚度为367nm的埋层二氧化硅层,从而将上部测量电路层和硅基底隔离开,解决了漏电流问题,使得传感器芯片可以在高温200 ℃以上的环境下使用。为了提高传感器在宽温度范围内的稳定性,对温度补偿工艺进行了研究,补偿后的传感器灵敏度温度系数和零位温度系数很容易控制在1×10-4/℃.FS。实验标定结果表明:在200 ℃下,研发的耐高温压力传感器具有很好的工作性能,其线性度误差达0.12%FS、重复性误差为0.1%FS、迟滞误差为0.12%FS,精度达0.197%FS,满足油井、风洞、汽车和石化工业等现代工业的应用需求。 In order to solve the pressure measurement problem in harsh environments, such as high temperature above 200 ℃, a special piezoresistive pressure sensor with the ranges of 0-120 kPa is developed based on the Micro Electro-mechanical System(MEMS) and Separation by Implantation of Oxygen(SIMOX) technology. The piezoresistive pressure sensor chip consists of a silicon substrate, a thin silicon dioxide layer, an optimized boron ion implantation layer photolithographically patterned on a Wheatstone bridge configuration, a stress matching layer with silicon nitride, a Ti Pt-Au beam lead layer for bonding gold wires, and a cavity fabricated by the wet etching. A special buried silicon dioxide layer with a thickness of 367 nm is fabricated by the SIMOX technology with the oxygen ion dose of 1.4 × 10^18/cm^2 and an implantation energy of 200 keV. The buried SiO2 layer is used to isolate the upper measuring circuit layer from the silicon substrate to avoid the leak current influence, so the fabricated sensor chip can be used in a high temperature above 200 ℃. In order to improve the stability in the wide temperature range, the temperature compensation methods are studied and carried out, so the Temperature Coefficient of Sensitivity(TCS) and Temperature Coefficient of Offset(TCO) of the compensated sensor are easily obtained to be less than 1× 10^-1 /℃ · FS. The calibration results show that the developed high temperature pressure sensor has good performances under 200 ℃ for a linearity error of 0.12%FS, a repeatability error of 0. 1%FS, a hysteresis error of 0. 12% FS, and the sensor's accuracy of 0. 197%FS. which shows it is able to meet the requirements of modern industry, such as oilcans, wind tunnels, mobiles, petrochemical industry, etc..
出处 《光学精密工程》 EI CAS CSCD 北大核心 2009年第6期1460-1466,共7页 Optics and Precision Engineering
基金 Supported by the National Natural Science Foundation of China (Grant No .50535030 50836004)
关键词 压力传感器 微机电系统 氧离子注入 恶劣环境 高温 pressure sensor MEMS SIMOX harsh environment high temperature
  • 相关文献

参考文献2

二级参考文献13

  • 1乐孜纯.微弯光纤压力传感器应变膜片研究[J].光学精密工程,1994,2(3):41-47. 被引量:6
  • 2祝宇虹,纪军红,孙宁.桥式硅压阻器件在气压测量中的应用[J].传感器技术,2005,24(5):74-76. 被引量:7
  • 3LEE H C,HUANG R S.A study of field-emission array pressure sensors[J].Sensors and Actuators,1992,A34:137-154.
  • 4JIANG J C.Fabrication of micromachined silicon tip transducer for tactile sensing[J]. J. Vac. Sci. Tech. B., 1993,(11):1962-1967.
  • 5FLOWLER R H,NORDEIM L W. Proc R SOC London, 1982[Z].
  • 6LEE H C,HUANG R S. Transducers.91[Z].
  • 7WEN ZH Y,WU Y.Development of an integrated vacuum microelectronic tactile sensor array[J].Sensors and Actuators A,2003,103:301-306.
  • 8XIAO SH R, CHANG J H, BEN F L. Multi path optical fiber sensor for atmospheric pressure[J]. SPIE, 2007, 6836.. 68361G-1-6.
  • 9李科杰.新编传感器技术[M].北京:国防工业出版社,2002.
  • 10肖韶荣.双通道抛物线型多模光纤位移传感器输出特性[J].量子电子学报,1999,16(2):186-189. 被引量:6

共引文献18

同被引文献37

  • 1冯勇建.MEMS高温接触式电容压力传感器[J].仪器仪表学报,2006,27(7):804-807. 被引量:20
  • 2张书玉,张维连,索开南,牛新环,张生才,姚素英.SOI高温压力传感器的研究[J].传感技术学报,2006,19(4):984-987. 被引量:22
  • 3李炯辉.金属材料金相图谱[M].北京:机械工业出版社,2007.
  • 4王权,丁建宁,王文襄,等.基于SIMOX技术耐高温微型油井压力传感器研究[C].2004年中国机械工程学会年会论文集.2004:99-102.
  • 5机械工程手册、电机工程手册编辑委员会.电机工程手册[M].北京:机械工业出版社.1982.
  • 6李辉,孙以材,潘国峰,李金,李鹏.高温压力传感器用多晶硅-AlN-硅单晶基片[J].仪表技术与传感器,2007(5):7-10. 被引量:1
  • 7Wade J Pulliam, Patrick M Russler, Robert S Fielder. High Tempe- rature High-Bandwidth Fiber-Optic MEMS Pressure Sensor Technol- ogy for Turbine Engine Component Testing [ C ]//Proceed-ings of SPIE ,2001,4578:229-238.
  • 8Narayanaswamy M, Joseph Daniel R, Sumangala K, et al. Computer Aided Modelling and Diaphragm Design Approach for High Sensi- tivity Silicon-on-Insulator Pressure Sensors [ J ]. Measurement, 2011,44(10) : 1924-1936.
  • 9Lee T H, Bhunia S, Mehregany M. Electromechanical Computing at 500 C with Silicon Carbide [ J ]. Science, 2010, 329 ( 5997 ) : 1316-1318.
  • 10Stuchebnikov V M. SOS Strain Gauge Sensors for Force and Pressure Transducers[J]. Sensors and Actuators A:Physica1,1991,28(3) :207- 213.

引证文献4

二级引证文献13

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部