摘要
应用原子发射光谱双谱线测温法原理,采用高速数字存贮示波器对半导体桥生成的等离子体温度以及桥上电压、电流变化进行了实时瞬态测量,获得了等离子体温度以及半导体桥上消耗的能量随时间变化的曲线,在半导体桥两端施加21V电压的条件下,对6.8、15、47、68、100μF五种不同容量的钽电容对半导体桥的作用时间、消耗能量以及生成等离子体温度的影响进行了研究,结果表明:半导体桥生成等离子体最高温度与电容呈线性关系,其最高温度由6.8μF时的2242K升高到100μF时的3324K。
The real-time measurement of the SCB voltage, current and plasma temperature based on the double-line method of atomic emission spectroscopy was conducted by using high-speed digital oscilloscope. The curves of SCB plasma temperature and SCB consumed energy versus time were obtained. The effects of five different capacitances （6.8,15,47,68,100 μF） on the functioning time,SCB consumed energy and SCB plasma maximum temperature were analyzed respectively when the charging voltage was 21 V. The results show that there is a linear relationship between the maximum temperatures and the capacitances. SCB plasma maximum temperature increases from 2242 K to 3324 K when capacitance increases from 6.8μF to 100μF.
出处
《含能材料》
EI
CAS
CSCD
北大核心
2009年第3期344-348,共5页
Chinese Journal of Energetic Materials
基金
国家自然科学基金(50806033)
重点实验室基金资助项目
关键词
应用化学
火工品
半导体桥
等离子体
温度测量
applied ehemistry
pyrotechnics
semiconduetor bridge
plasma
temperature measurement
