摘要
ＺｎＯ薄膜是具有多种特性的功能薄膜。采用ＲＦ磁控反应溅射的方法可制备出较高质量的ＺｎＯ透明导电薄膜。该薄膜的电阻率为７．５×１０－３Ωｃｍ；可见光透射率约为８５％；载流子浓度为５．７×１０１９ｃｍ－３；霍尔迁移率为５．９９ｃｍ２／ｖ·ｓ。影响ＺｎＯ透明导电薄膜性能的因素很多，但是溅射用的靶体材料，反应溅射时的温度控制以及反应的氧气氛的控制尤为重要，实验表明使用掺有３．０ｗｔ％Ａｌ２Ｏ３的ＺｎＯ靶，基片温度控制在３００℃，氧氩比为１∶１０能制备出性能比较好的透明导电薄膜。本文对这三方面的影响进行实验并讨论了有关结果。
ZnO Film have been found wide application. ZnO transparent conducting film has been prepared by RF planar magnetron sputtering. The dependence of electrical and optical characteristics upon target material, sputtering gas and substrate temperature has been investigated. The resistivity of film is 4.5×10-3cm, carrier concentration and Hall mobility are 2.3×10.19cm-3 and 5.99 cm2/v. sec respectively. The optical transmission is about 85%.
出处
《材料科学与工程》
CAS
CSCD
1998年第2期43-45,71,共4页
Materials Science and Engineering
