摘要
采用溶剂热法以二甲苯作为溶剂,NaN3作为氮源,GaCl3作为镓源,合成GaN为中间产物,进而以空气为氧源来合成Ga2O3,反应温度为350℃。热处理后,成功得到了-βGa2O3超长纳米线,通过X射线衍射(XRD)、红外射线(IR)、透射电子显微(TEM)、选区电子衍射(SAED)、高分辨率的透射电镜(HRTEM)、光致发光(PL)、X射线荧光光谱(EdX)等表征发现,所得-βGa2O3超长纳米线是沿着[00 1]晶向自堆垛生长的,PL研究表明,氧化镓主要有两个强的发射峰,分别在416 nm和580 nm处(λ发射=250 nm)。
A series of monoclinic gallium oxide ultralong nanowires was successfully composed at 350 ℃ by using GaCl3, NaN3 and atmosphere as the reactants, dimethylbenzene as solvent, GaN as the intermediate product, and by using solvothermal method. The characterization of XRD, IR, TEM, SAED,HRTEM, PL suggested that the ultralong gallium oxide nanowire growed with [-00 1]by self- stowing. Besides, the optical property of β-Ga2O3 was observed in the photoluminescence （PL） spectra, which showed that the prepared product emitted strong luminescence at 416 nm and 580 nm.
出处
《河北科技师范学院学报》
CAS
2009年第2期34-38,共5页
Journal of Hebei Normal University of Science & Technology
关键词
-βGa2O3超长纳米线
溶剂热法
自堆垛
the ultralong β-gallium oxide nanowire
solvothermal method
self-stowing
