摘要
A single crystalline Mg2Si film was formed by solid phase reaction （SPR） of a Si（111） substrate with an Mg overlayer capped with an oxide layer（s）,which was enhanced by post annealing from room temperature to 100℃ in a molecular beam epitaxy （MBE） system.The thermal stability of the Mg2Si film was then systematically investigated by post annealing in an oxygen-radical ambient at 300℃,450℃ and 650℃,respectively.The Mg2Si film stayed stable until the annealing temperature reached 450℃ then it transformed into amorphous MgOx attributed to the decomposition of Mg2Si and the oxidization of dissociated Mg.
A single crystalline Mg2Si film was formed by solid phase reaction （SPR） of a Si（111） substrate with an Mg overlayer capped with an oxide layer（s）,which was enhanced by post annealing from room temperature to 100℃ in a molecular beam epitaxy （MBE） system.The thermal stability of the Mg2Si film was then systematically investigated by post annealing in an oxygen-radical ambient at 300℃,450℃ and 650℃,respectively.The Mg2Si film stayed stable until the annealing temperature reached 450℃ then it transformed into amorphous MgOx attributed to the decomposition of Mg2Si and the oxidization of dissociated Mg.
基金
Project supported by the National Natural Science Foundation (Grant Nos 50532090,60606023 and 60621091)
the Ministry of Science and Technology of China (Grant Nos 2002CB613502 and 2007CB936203)
Australia Research Council
