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One-on-One and R-on-One Tests on KDP and DKDP Crystals with Different Orientations 被引量:7

One-on-One and R-on-One Tests on KDP and DKDP Crystals with Different Orientations
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摘要 By testing a substantial number of tripler and z-cut KDP and DKDP crystals, we have observed that at 355nm, the laser induced damage threshold in the R-on-one test is higher than that in the one-on-one test. It is proved that laser conditioning is an efficient way to improve the damage resistance. The efficiency of laser conditioning becomes increasingly good with smaller ramping fluence steps. We have also found that the damage resistance of the z-cut crystal is higher than the triplet cut, and the pinpoint number is definitely less in the z-cut crystal. The reason for these observations is discussed. By testing a substantial number of tripler and z-cut KDP and DKDP crystals, we have observed that at 355nm, the laser induced damage threshold in the R-on-one test is higher than that in the one-on-one test. It is proved that laser conditioning is an efficient way to improve the damage resistance. The efficiency of laser conditioning becomes increasingly good with smaller ramping fluence steps. We have also found that the damage resistance of the z-cut crystal is higher than the triplet cut, and the pinpoint number is definitely less in the z-cut crystal. The reason for these observations is discussed.
出处 《Chinese Physics Letters》 SCIE CAS CSCD 2009年第8期334-336,共3页 中国物理快报(英文版)
基金 Supported by the National Natural Science Foundation of China under Grant No 10676019.
关键词 sea surface nonliear interaction numerical method sea surface, nonliear interaction, numerical method
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  • 1De Yoreo J, Burnham A and Whitman P 2002 Int. Mater. Rev. 47 113.
  • 2Burnham A, Hackel L, Wegner P, Parham T, Hrubesh L, Penetrante B, Whitman P, Demos S, Menapace J, Runkel M, Fluss M, Feit M, Key M and Biesiada T 2002 Proc. SPIE 4679 173.
  • 3Burnham A, Runkel M, Feit M, Rubenchik A, Folyd R, Land T, Siekhaus W and Hawley-Fedder R 2003 Appl. Opt. 42 5483.
  • 4Hu G H, Zhao Y A, Sun S T, Li D W, Sun X, Shao J D and Fan Z X 2009 Chin. Phys. Lett. 26 097802.
  • 5Hu G H, Zhao Y A, Sun S T, Li D W, Sun X, Shao J D and Fan Z X 2009 Chin. Phys. Lett. 26 097803.
  • 6Feit M and Rubenchik A 2004 Proc. SPIE 5273 74.
  • 7Adams J, Jarboe J, Carr C, Feit M, Hackel R, Halpin J, Honig J, Lane L, Luthi R, Peterson J, Ravizza D, Ravizza F, Rubenchik A, Sell W, Vickers J, Weiland T, Wennberg T, Willard D and Yeoman M 2007 Proc. SPIE 6403 64031M-1.
  • 8DeMange P, Negres R, Carr C, Radousky H and Demos S 2005 Proc. SPIE 5991 599107-1.
  • 9Runkel M and Burnham A 2001 Proc. SPIE 4347 408.
  • 10Carr C, Feit M and Rubenchik A 2005 Proc. SPIE 5991 59911Q-1.

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