期刊文献+
任意字段
题名或关键词
题名
关键词
文摘
作者
第一作者
机构
刊名
分类号
参考文献
作者简介
基金资助
栏目信息

基于CMOS集成有源传感器的新型高能物理粒子轨迹追踪器 被引量：2

CMOS Active Pixel Sensors Based Detector for High-Energy Particle Tracking
下载PDF
导出
摘要 本文研究了一个采用标准0.35μm CMOS工艺制造的新型高能物理粒子轨迹追踪器.这个新型的追踪器运用CMOS有源像素传感器技术(CMOS Monolithic Active Pixel Sensors,MAPS)将信号的探测与处理电路集成在一起,在像素的内部实现了相关双次采样操作(Correlated Doubled Sampling,CDS).实验芯片包含一个128行×32列的像素矩阵,其中,像素的大小为25×25μm2.通过采用放射源55Fe的测定,得到像素的等效输入随机噪声(Temporal Noise)仅为12个电子而固定噪声(Fixed Pattern Noise,FPN)仅为4个电子.传感器的电荷-电压转换系数(Charge-to-Voltageconversion Factor,CVF)为60μV/e-.测试中,芯片的信号读取速度达到了12μs/帧. Fabricated in a standard 0.35μm CMOS process,a new type detector designed for high energy particle tracking was studied in this work. The detector is based on monolithic CMOS active pixel sensor （MAPS） technology. Using standard CMOS process, signal processing circuits are integrated on the same substrate as the sensors and correlated double sampling （CDS） operation is realized inside pixel. The prototype consists of a 128 × 32 pixel array and pixel pitch is 25 × 25 square of micrometer. Measured by a radioactive source^55Fe, the temporal noise is only about 12 electrons and the residual offset is only about 4 electrons. The charge-to-voltage conversion factor （CVF） is about 60μV/e- . During the tests, readout speed reaches 12μ/frame.
作者 李琰 Yavuz Degerli 纪震
机构地区 深圳大学计算机与软件学院德州仪器DSPs实验室 深圳大市传感器技术重点实验室(深圳大学) CEA Saclay
出处 《电子学报》 EI CAS CSCD 北大核心 2009年第7期1393-1399,共7页 Acta Electronica Sinica
基金 国家自然科学基金(No.60572100) 美国德州仪器公司创新基金和深圳市科技项目(No.200706) 深圳大学科研基金面上项目(No.801000007) 深圳市传感器实验室开放基金(No.SST200914)
关键词 高能物理粒子轨迹追踪器 CMOS有源像素传感器 相关双次采样 随机噪声 固定噪声 high-energy particle tracking detector CMOS active pixel sensors correlated double sampling temporal noise fixed pattern noise
分类号 TP212.9 [自动化与计算机技术—检测技术与自动化装置]
  • 相关文献

参考文献16

  • 1M Winter. Development of CMOS sensors adapted to the vertex detector requirements[ R]. Bangalore, India. International Linear Collider Workshop 2006.
  • 2M Winter. Data rate of a vertex detector made of CMOS pixel sensors[ R]. Hamburg, Germany. International Linear Collider Workshop 2007.
  • 3M Big'as et al.Review of CMOS image sensors[J] .Microelectronics Journal,2006,37(5) :433 - 451.
  • 4G Deptch et al. Design and testing of monolithic active pixel sensors for charged particle tracking [ J ]. IEEE Trans. Nucl. Sci. ,2002,49:601 - 610.
  • 5G Deptch et al. Development of monolithic active pixel sensors for charged particle tracking[ J]. Nucl.Instrum. Meth. A,2003, 511:240 - 249.
  • 6Y Degerli et al.A fast monolithic active pixel sensor with pixel level reset noise suppression and binary outputs for charged particle detection[ J]. IEEE Tran. Nucl. Sci. ,2005,52(6) :3186 - 3193.
  • 7Y Li et al. CMOS sensors for the vertex detector of the future international linear collider [ J]. Nucl. Instrum. Meth. A, 2007, 572(1):300-304.
  • 8Y Degerli et al. Performance of a fast binary readout CMOS active pixel sensor chip designed for charged particle detection [J]. IEEE Tran. Nucl. So. ,2006,53(6) :3949 - 3955.
  • 9R Menill. Intra-pixel reset noise cancellation[ A]. Proc.2001 IEEE Workshop on Charge Coupled Devices and Advanced Image Sensors[ C ]. Lake Tahoe, Nevada, USA, 2001. 153 - 156.
  • 10I Takayaaagi et al. A four-transistor capacitive feedback reset active pixel and its reset noise reduction capability[A] .Proc. 2001 IEEE Workshop on Charge Coupled Devices and Advanced Image Sensors[ C]. Lake Tahoe, Nevada, USA, 2001. 118- 122.

同被引文献13

  • 1李琰,Yavuz Degerli,姜来,纪震.CMOS有源集成像素传感器检测高能物理粒子[J].深圳大学学报（理工版）,2009(1):30-35. 被引量：1
  • 2刘宇,王国裕.APS CMOS图像传感器复位电路的设计研究[J].半导体光电,2005,26(B03):22-25. 被引量：2
  • 3Bigas M,Cabruja E,Forest J,et al.Review of CMOS image sensors[J].Microelectronics Journal,2006,37(5):433-451.
  • 4Yang D,Gamal El A.Comparative analysis of SNR for image sensors with enhanced dynamic range [A].Proceedings of SPIE [C].San Jose,CA,1999,3649:197-211.
  • 5Bulgheroni A,Bianda M,Caccia M,et al.Characterization of a thinned back illuminated MIMOSA V sensor as a visible light camera[J].Nuclear Instruments and Methods in Physics Research Section A,2006,565(1):221-226.
  • 6Pain B,et al.Analysis and enhancement of low-light-level performance of photodiode type CMOS active pixel imagers operated with sub-threshold reset [A].IEEE Workshop on CCDs and AIS [C].Japan:Nagano,1999.R13.1-R13.4.
  • 7Tian H.Noise Analysis in CMOS Image Sensors [D].USA:Stanford University,2000.
  • 8Fowler B A,Godfrey M,Balicki J,et al.Low-noise readout using active reset for CMOS APS [A].Proceedings of SPIE [C].San Jose,CA,2000,3965:126-135.
  • 9Sandor L Barn,a, Pasadena. Reset Voltage Generation Circuit for CMOS Imagers [ S ]. US20040036787A1 (P). 2004-02-06.
  • 10Joe K,David Hass,Cox F.Level shifting interfaces for low voltage logic [A].Proceedings of the 9th NASA Symposium on VLSI Design [C].USA:Albuquerque New Mexico,2000.3.1.1-3.1.7.

引证文献2

二级引证文献12

电子学报
2009年 第7期

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部