摘要
使用无锡上华0.5μm（DPTM）标准CMOS工艺制备了螺旋电感芯片,利用矢量网络分析仪和探针台搭建了硅基螺旋电感测试装置,对该硅基螺旋电感进行了测试。采用两种去除电路寄生参数的剥离方法,分析了高频条件下各种测试寄生参量的影响。建立了基于0.5μm（DPTM）标准CMOS工艺在片螺旋电感的寄生参量单π等效电路模型,详细列出了在片螺旋电感测试和寄生参数的剥离步骤,测试结果在0.1~8.5 GHz范围内与三维电磁场（HFSS）仿真结果有很好的一致性,验证了此方法在片上螺旋电感测试中的有效可行性。
The spiral inductor is made by the CSMC 0.5μmDPTM standard CMOS technology and measured by vector network analyzer and probe platform. Put the measurements used in RF and MW into the on-chip spiral inductors. Analyzed the effect of parasitical parameter for the measurement at high frequency and measured the on-chip spiral inductors by that. Parasitical parameters circuit models for the measurement of on-chip spiral inductors by standard 0.5 μm （DPTM） CMOS technology is also developed. The methods of measurements and parasitical parameters of de-embedding are discussed clearly. According to the results, the measurements show excellent agreement with the re- sults of the electromagnetic solver（HFSS） over a frequency from 0.1 GHz to 8.5 GHz,so it＇s a good measurement at high frequency.
出处
《电子测量与仪器学报》
CSCD
2009年第7期107-111,共5页
Journal of Electronic Measurement and Instrumentation
基金
国家自然科学基金(编号:90607003)资助项目
关键词
在片螺旋电感
电路模型
在片测试法
剥离
on-chip inductor
circuit model
on wafer measurement
de-embedding
