摘要
在以ＩｎＣｌ３、ＣｕＣｌ、ＳｅＯ２为主盐，酒石酸为络合剂，聚乙二醇和硫脲为添加剂的电镀液中，在Ｍｏ片或Ｔｉ片上进行阴极电沉积，可获得ＣｕＩｎＳｅ２半导体膜，它与ＣｄＳ组成的ｎ－ＣｄＳ／ｐ－ＣｕＩｎＳｅ２光电池光电效率可达７％～８％，部分达１１％。
Abstract Electrodeposition of CuInSe\-2 film on Mo or Ti plate from the solution containing InCl\-3,CuCl,SeO\-2,tartaric acid (complexing agent) and small amount of additives was investigated.The nCdS/pCuInSe\-2 photoelectric cell was then built.The photoelectric efficiency was 7%￣8%,some could reach 11%.
出处
《材料保护》
CAS
CSCD
北大核心
1998年第7期8-9,共2页
Materials Protection
基金
云南省自然科学基金
