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Al^(3+)掺杂对KDP晶体生长习性的影响 被引量:7

Effects of Al^(3+) Ion on the Growth Habit of KDP Crystals
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摘要 溶液中微量Al3+对KDP(磷酸二氢钾)晶体生长具有多方面的影响。本文通过传统降温法和"点籽晶"快速生长法生长了Al3+离子掺杂的KDP晶体,并通过激光偏振法实时测量了晶体柱面的生长速度和死区。实验表明,当Al3+掺杂浓度小于20×10-6ppm时可提高溶液的稳定性,并抑制柱面的扩展;而当浓度高于20×10-6ppm时会使传统法生长的晶体发生明显的"楔化",成帽区延长,快速法生长的晶体变得细长;高浓度(>50×10-6ppm)时溶液稳定性遭到破坏,晶体出现开裂、包藏等宏观缺陷。KDP晶体的表面形貌也随掺杂发生改变。 Potassium dihydrogen phosphate (KDP) crystals were grown in the presence of Al^3+ impurities via conventional temperature cooling method and rapid growth method, respectively. The growth rate of the prismatic face of KDP crystals was measured using a laser-polarization-interference technique. Experiments showed that Al^3+ doped would increase the critical supersaturation and reduce the growth rate of prismatic face, and make KDP crystals tapering in conventional temperature cooling method. In very high impurity concentration ( 〉50 × 10^-6 ppm), the growth KDP crystal would occur inclusions at the prismatic sector, and destroyed stability of the growth solution.
出处 《硅酸盐通报》 CAS CSCD 北大核心 2009年第4期631-635,共5页 Bulletin of the Chinese Ceramic Society
基金 山东省博士基金(No.2004BS04022)
关键词 KDP晶体 Al3+离子 晶体生长 生长习性 KDP crystal Al^3+ ions crystal growth growth habit
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参考文献7

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