摘要
采用电沉积法在ITO导电玻璃表面沉积了PbS薄膜,并用X射线衍射仪(XRD)、原子力显微镜(AFM)以及傅立叶变换红外光谱仪(FT-IR)对薄膜的结构和光学性能进行了表征,研究了沉积温度对薄膜的相组成、显微形貌以及光学性质的影响。结果表明:在U=3 V,pH=2.5,T=60℃,沉积时间为20 min,加入EDTA作络合剂的情况下,可制备出沿(111)和(200)晶面取向生长的立方相PbS薄膜。薄膜显微结构均匀而致密,随着反应温度从20℃增加到60℃,薄膜内的压应力逐渐减小,禁带宽度也随着变小。所制备的微晶PbS薄膜的禁带宽度约为0.39 eV。
PbS thin films were prepared on ITO substrates using eletrodeposition method. The optical properties and structure of the thin films were characterized by X-ray diffraction （XRD）, atomic force microscopy （AFM） and fourier transform infrared spectrometer （FT-IR）. The influences of deposition temperature on the phase compositions, surface morphologies and optical properties of the films were investigated. The results show that cubic PbS thin films with oriented growth along （111 ） and （200） direction can be obtained at U = 3 V, pH = 2.5, T = 60℃, t = 20 min and adding EDTA as agent. The deposited thin films exhibit a dense and homogenous surface morphology. The compressive stress and the forbidden bandgap of the as-prepared PbS thin films decreased with the solution temperature increasing from 20-60 ℃. The bandgap of the thin films is about 0.39 eV.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
2009年第4期847-850,共4页
Journal of Synthetic Crystals
基金
教育部新世纪优秀人才支持计划(No.NCET-06-0893)
关键词
PbS薄膜
电沉积
沉积温度
光学性能
PbS thin films
electrodeposition
deposition temperature
optical properties
