摘要
采用过冷熔体定向约束生长法生长了尺寸约为30mm×14mm×7mm的块状4-氨基二苯甲酮晶体，并对生长晶体的光学均匀性、光学透过率、二次谐波转换效率以及激光损伤阈值等性能进行TN试。结果表明：定向生长的4-氨基二苯甲酮晶体在650～1200nm波段内具有90％以上的光学透过率；最高二次谐波转换效率达到64．9％：单点激光脉冲损伤阈值分别为205．4GW／cm2（输入光波为1064nm）和267．2GW／cm2（输入光波为532nm）。采用过冷熔体定向约束生长的4-氨基二苯甲酮晶体适合于用作Nd：YAG激光的二次倍频器件，也适合于用作650～1200nm波段的光学调制器件。
The bulk 4-aminobenzophenone（ABP） crystal, with a dimension of about 30 mm × 14 mm×7 mm, had been grown by seed-oriented undercooled melt growth method. The optical properties of the grown crystal, such as optical homogeneity transmittance, second harmonic efficiency as well as laser damage thresholds, were also measured. The results showed that the optical transparency was up to 90% in the spectral range between 650 nm and 1200 nm. The second harmonic efficiency was measured with an outer cavity frequency-doubling method and its maximal value was about 64.9%. The laser damage thresholds were measured with a single pulse radiation and the values were 205.4 GW/cm： and 267.2 GW/cm2 at the wavelength of 1064 nm and 532 nm, respectively. The bulk ABP crystal grown by the oriented growth method was suitable to apply as frequency-doubling device for Nd： YAG laser, as an optical modulation device for the wavelength range of 650-1200 nm.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
2009年第4期1046-1050,共5页
Journal of Synthetic Crystals
基金
陕西省自然科学基金(No.SJ08E105)
西安建筑科技大学人才基金(No.RC0716)
