摘要
采用低雷诺数κ-ε紊流模型,模拟了直拉法坩埚内加入间壁后硅熔体的流动和氧的输运情况。分析了不同的间壁长度、间壁位置、晶体转速、坩埚转速和温度边界条件对流场和浓度场的影响。结果表明:变化间壁的长度和位置,硅熔体流动有较大的变化;间壁的长度变短,熔体-晶体界面的氧浓度增加;增加间壁与坩埚中心轴的距离,熔体-晶体界面的氧浓度降低;增加晶体转速或坩埚转速能提高熔体-晶体界面氧浓度的径向分布均匀性;增加坩埚侧壁与熔体-晶体界面的温差,流动增强,熔体-晶体界面的氧浓度增大。
Numerical simulations of flow of silicon melt and oxygen transport in a crucible with an additional partition were carried out using the low-Reynolds number-turbulence model. The effects of different partition sizes and locations, crystal and crucible rotation rates, temperature boundary conditions on the flow and concentration fields were analyzed. Simulation results show that various melt flows are observed when the sizes or locations of the partition is changed. The oxygen concentration at the melt-crystal interface increases with shortening the partition length, and decreases with increasing the distance between the partition and crucible axis. A higher crystal or crucible rotation rate can improve the radial distribution uniformity of oxygen concentration at the melt-crystal interface. When the temperature difference between side wall of the crucible and the melt-crystal interface is increased, the flow becomes stronger and the oxygen concentration at the melt-crystal interface increases.
出处
《材料科学与工程学报》
CAS
CSCD
北大核心
2009年第4期581-585,共5页
Journal of Materials Science and Engineering
基金
国家自然科学基金资助项目(50676113)
教育部新世纪优秀人才支持计划资助项目(NCET-05-0761)
关键词
直拉法
间壁
紊流模型
数值模拟
硅
Czochralski method
partition
turbulence model
numerical simulation
silicon
