摘要
利用磁控反应溅射技术制备了氮化钽薄膜，利用ＴＥＭ、ＸＲＤ技术研究了薄膜的微观结构。研究结果表明：薄膜中多相共存；薄膜晶粒细小（１６ｎｍ左右）；同时还发现，在一定工作压力下，随着氮分压的提高，氮化物晶粒形成的取向改变，即平行于基体表面生长的晶面会有改变。一定工作压力下，制备的氮化钽薄膜硬度高达４０００ｋｇ／ｍｍ２以上。本文探讨了氮化钽薄膜高硬度的原因，并且讨论了随氮分压的提高薄膜织构变化的原因。
The taltanlum nitride film has been deposited by the reactive magnetron sputtering The microstructure of the film were characterize by XRD and TEM techniques The results revealed that the multiphase was coexistent in the film and the grain size of the film was small(about 16nm) In addition,the preferred orientation was observed,and it changed and developed along the direction where the interplanar spacing was more broad when increasing N 2 partial pressure Synthesized under specific conditions the hardness of the taltanlum nitride film reached 4000kg/mm 2 or above The cause of high hardness of the film was discussed The cause of the preferred orientation changed when increasing N 2 partial pressure was also discussed
出处
《材料工程》
EI
CAS
CSCD
北大核心
1998年第9期18-20,27,共4页
Journal of Materials Engineering
基金
国家自然科学基金
关键词
氮化钽
薄膜
硬变
显微组织
制备
taltanlum nitride film hardness microstructure
