摘要
对ＶＬＳ机理下稻壳合成ＳｉＣ晶须（ＳｉＣＷ）及生长动力学进行了研究。结果表明，ＳｉＯ２与Ｃ在高温下生成ＳｉＯ的反应是ＳｉＣ晶须生长的速率控制步骤；在形成晶须的催化剂作用下，ＳｉＣ晶须的生长速率与ＳｉＯ在催化剂熔球周围的浓度成正比；ＳｉＣ晶须生长的催化选择性随温度的增加而提高；复合催化剂可提高合成ＳｉＣ晶须的反应速率及催化选择性。
SiC whiskers (SiC W) synthesized from rice hulls and growth kinetics via VLS process are studied.The formation reaction of SiO from SiO_2 and C at high temperature is the rate-determing step in SiC W synthesis process.Under the effect of whisker-formation-catalyst,the growth rate of SiC W is directly proportional to the concentration of SiO near the melten phase of the catalyst.The selectivity of the catalyst for growing SiC W increased with the temperature.The composite catalyst enhances the reaction rate and the selectivity forg rowing SiC W.
