摘要
通过能量为１００ｋｅＶ，剂量为１×１０１８ｃｍ－２的Ｎ＋注入到硅基体中，经１０００～１２００℃之间快速退火后，形成了含氧的硅与氮化硅镶嵌结构的薄膜层．在室温下观测到主要来自于４５ｎｍ表面层的能量分别为：３．３ｅＶ、３．０ｅＶ、２．８ｅＶ和２．２ｅＶ的光致发光．通过ＸＰＳ、ＡＥＳ的分析，确认了由于氧的插入，样品中Ｎ－Ｓｉ－Ｏ缺陷，Ｓｉ／ＳｉＯ２界面发光中心，分别是引起３．０ｅＶ和２．２ｅＶ的光致发光的主要原因．
Abstract Si 3N 4 nanoparticles embedded in Si film is formed by nitrogen ion implanted into Si wafers with high dose (1×10 18 cm -2 ) followed by a Rapid Thermal Annealing (RTA) (1000～1200℃). And four emission bands are observed, corresponding to 3 3eV, 3 0eV, 2 8eV and 2 2eV, respectively. Our experiment results demonstrate that silicon dangling band, defect state of N Si O and Si/SiO 2 interfaces play a dominant role in the PL spectra.
