摘要
采用了2种γ脉冲辐射源，在脉冲宽度分别约为20，50，150ns，剂量率为10^6～10^6Gy（Si）·s^-1下，对5种不同类型的电子器件进行了辐照试验并对其辐照响应进行了分析，比较了不同脉冲宽度条件下辐照响应的差异。实验结果表明：脉冲宽度是影响瞬时辐照效应的重要因素，γ脉冲宽度越宽，辐照响应越强，分离器件比集成电路受脉宽的影响更明显。
Mechanism of pulse-width effects on electronic components is described. The relationship of pulse-width and radiation response is presented. Five types of devices are tested under three different pulse-widths（about 20 ns,50 ns, 150 ns） of dif ferent simulative radiation sources, the dose rate is about 10^6 to 10^9 Gy（Si）/s. The experiment results are analysed and discussed. The differences of radiation response under different pulse-widths are compared. It is shown that radiation effects are strongly in fluenced by pulse-width. Under the same radiation dose rate, longer γ pulse-width brings longer radiation storage time and stronger radiation response to devices. Discrete device is more obviously influenced by pulse-width than integrated circuit.
出处
《强激光与粒子束》
EI
CAS
CSCD
北大核心
2009年第10期1539-1541,共3页
High Power Laser and Particle Beams
基金
国防科技基础研究基金项目
关键词
脉冲宽度
辐射效应
剂量率
辐射存储时间
pulse-width
radiation effect
dose rate
radiation storage time
