期刊文献+
任意字段
题名或关键词
题名
关键词
文摘
作者
第一作者
机构
刊名
分类号
参考文献
作者简介
基金资助
栏目信息

GaN/InGaN应变层临界厚度的计算 被引量：1

Calculation of the Critical Layer Thickness for GaN/InGaN
下载PDF
导出
摘要 本文主要借鉴PB模型、Fisher模型和Μatthews模型并通过优化其中的组分和滑移间距参数,考虑影响临界厚度的相关因素,对GaN/InGaN异质结应变层临界厚度进行理论计算,再结合实验值进行比较分析,发现PB模型比较能准确估计GaN/InGaN异质结应变层临界厚度.最后进一步考虑热应力对临界厚度的影响时,发现对其影响不大. The paper separately calculates the critical layer thickness for an InGaN expitaxial layer growthing on a GaN substrate and proposes with PB model, Fisher modeland Matthews model by analyzing parameters about passion ration and Burgers vector, and then compares with experimental values reported for various GaN/InGaN systems. The CLT calculated by the PB model can yield a better agreement with the measured values. At last, we conclude that the thermal stress has little effect on the critical layer thickness for GaN/InGaN.
作者 郑江海
机构地区 漳州师范学院物理与电子信息工程系
出处 《漳州师范学院学报（自然科学版）》 2009年第3期68-72,共5页 Journal of ZhangZhou Teachers College（Natural Science)
关键词 异质结 应变层 临界厚度 heterostructure strain layer critical layer thickness
分类号 O471.4 [理学—半导体物理]
  • 相关文献

参考文献12

  • 1C. A. Parker, J. C. roberts, S. M. Bedair, et al. Determination of the critical layer thickness in the InGaN/GaN Heterostructures[J]. Appl. Phys. Lett., 1999, 75(18): 2776-2778.
  • 2Z. C. Feng, W. Liu, S. J. Chua, et al. Photoluminescence characteristics of low indium composition InGaN thin films grown on sapphire by metalorganic chemical vapor deposition[J]. Thin Solid Films, 2006, 498(1-2): 118-122.
  • 3II-Kyu Park, Min-Ki Kwon, Sung-Ho Baek, et al. Enhancement of phase separation in the InGaN layer for self-assemhled In-rich quantum dots[J]. Appl. Phys. Lett., 2005, 87(061906): 1-3.
  • 4H. J. Chang, C. tl. Chen, Y. F. Chert, et al. Direct evidence of nanocluster-induced luminescence in InGaN epifihns[J]. Appl. Phys. Lett., 2005, 86(021911):1-3.
  • 5R. People, J.C. Bean. Calculation of critical layer thickness versus lattice mismatch for GexSi1-x/Si strained-layer heterostructures[J]. Appl. Phys. Lett., 2000, 47(3): 3322-3324.
  • 6S. Strite, H. Morkoc. GaN, AlN, and InN: A review[J]. J. Vac. Sci. Technol. B, 1992, 10(4): 1237-1266.
  • 7A. F. Wright. Elastic properties of zinc-blende and wurtzite AIN, GaN, and InN [J]. J. Appl. Phys., 1997, 82(6): 2833-2839.
  • 8M. J. Reed, N. A. EI-Masry, C. A. Parke, et al. Critical layer thickness determination of GaN/InGaN/GaN double Heterostructurcs [J]. Appl. Phys. Lett., 2000, 77(25): 4124-5123.
  • 9A. Fischer, H. Kiihne, H. Richter. New approach in equilibrium theory for strained layer relaxation[J]. Physics Review Letters, 1994, 47(3): 2712-2715.
  • 10Chinkyo Kim,I. K. Robinson, Jaemin Myoung, et al. Critical thickness of GaN thin fihns on sapphire (0001) [J]. Appl. Phys. Lett., 1996, 69(16): 2358-2360.

二级参考文献29

  • 1[1]BLANT A V, CHENG T S, JEFFS N J. EXAFS studies of Mg doped InN grown on Al2O3 [J] . Materials Science and Engineering, 1999, B59 (1～3): 218-221.
  • 2[5]NANISHI Y, STAITO Y, YAMAGUCHI T. RF-molecular beam epitaxy growth and properties of InN related alloys, Jpn J Appl Phys, 2003, 42: 2549-2599.
  • 3[6]BECHSTEDT F, FURTHMULLER J. Do we know the fundamental energy gap of InN? [J] . Journal of Crystal Growth,2002, 246: 315-319.
  • 4[7]WU J, WICZ W W, YU K M, et al. Unusual properties of the fundamental band gap of InN [J] . Applied Physics Letters, 2002, 80: 3967-3969.
  • 5[8]FOUTZ B E, OLEARY S K, SHUR M S, et al. Transient electron transport in wurtzite GaN, InN and AlN [J] . Journal of Applied Physics, 1999, 85 (11): 7727-7734.
  • 6[9]BOCKOWSKI M. High pressure direct synthesis of Ⅲ-Ⅴ nitrides [J] . Physica B, 1999, 265: 1-5.
  • 7[10]HIGASHIWAKI M, MATSUI T. Plasma assisted MBE growth of InN films and InAlN/InN heterostructures [ J] . Journal of Crystal Growth, 2003, 251: 494-498.
  • 8[11]GUO O, OKADA A, KIDERA H, et al. Effect of GaN buffer layer on crystallinity of InN grown on (111) GaAs[J]. Journal of Crystal Growth, 2002, (237-239): 1032-1036.
  • 9[12]ALVES H W L, ALVES J L A, SCOLFARO L M R, et al.Planar force constant method for lattice dynamics of cubic InN [ J] . Materials Science and Engineering, 2002, B93:90-93.
  • 10[13]YANG F H, HWANG J S, YANG Y J, et al. Growth of high quality epitaxial InN film with high speed reactant gas by organomet allic vapor phase epitaxy [J] . Jpn J Appl Phys,2002, 41: 11321-1324.

共引文献7

同被引文献12

  • 1许振嘉.半导体的检测与分析[M].北京:科学出版社,2007:54.
  • 2HUANG P P, HUANG T W, WANG H. et al. A 94 GHz 0.35 W power amplifier module [ J]. IEEE Transactions on Microwave Theory and Techniques, 1997, 45 (12): 2418-2423.
  • 3MALTHEWS J W, BLACKESLEE A E. Defects in epi- taxial multilayers [ J]. Journal of Crystal Growth, 1974, 27 (12): 118-125.
  • 4ORDERS P J, USHER B F. Determination of critical layer thickness in In Gal_" As heterostructures by X-ray diffraction [J]. Applied Physics Letters, 1987, 50 (15) : 980-982.
  • 5PEOPLE R, BEAN J C. Calculation of critical layer thickness versus lattice mismatch for GexSil_JSi strained-layer heterostructures [ J]. Applied Physics Let- ters, 1985, 47 (3): 322-324.
  • 6JACOB K T, SHUBHRA R, RANNESH L. Vegard' s law: a fundamental relation or an approximation [ J]. In- ternational Journal of Materials Research, 2007, 98 (9): 776-779.
  • 7SADAO A. Physical properties of III-V semiconductor compounds [ M ]. USA : John Wiley & Sons Publisher , 1992: 20-25.
  • 8ADACHIS.1V族、Ⅲ-V族和Ⅱ-Ⅵ族半导体材料的特性[M].季振国,译.北京:科学出版社,2009:37-45.
  • 9谢自力,邱凯,尹志军,方小华,陈建炉,王向武,陈堂胜,高建峰.PHEMT结构材料及器件[J].微纳电子技术,2002,39(2):15-17. 被引量：4
  • 10李晓峰,张景文,高鸿楷,侯洵.透射式GaAs光电阴极AlGaAs窗层Al组份的X射线衍射分析[J].光子学报,2002,31(4):454-457. 被引量：1

引证文献1

漳州师范学院学报（自然科学版）
2009年 第3期

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部