摘要
We investigate the temperature dependence of photoluminescence （PL） and time-resolved PL on the metamorphic InGaAs quantum wells （QWs） with an emission wavelength of 1.55μm at room temperature. Time-resolved PL measurements reveal that the optical properties can be partly improved by introducing antimony （Sb） as a surfactant during the sample growth. The temperature dependence of the radiative lifetime is measured, showing that for QWs grown with Sb assistance, the intrinsic exciton emission is dominated when the temperature is below 60K, while the nonradiative process becomes activated with further increases in temperature. However, without Sb assistance, the nonradiative centers are activated when the temperature is higher than 20 K.
We investigate the temperature dependence of photoluminescence （PL） and time-resolved PL on the metamorphic InGaAs quantum wells （QWs） with an emission wavelength of 1.55μm at room temperature. Time-resolved PL measurements reveal that the optical properties can be partly improved by introducing antimony （Sb） as a surfactant during the sample growth. The temperature dependence of the radiative lifetime is measured, showing that for QWs grown with Sb assistance, the intrinsic exciton emission is dominated when the temperature is below 60K, while the nonradiative process becomes activated with further increases in temperature. However, without Sb assistance, the nonradiative centers are activated when the temperature is higher than 20 K.
基金
Supported by the National Natural Science Foundation of China under Grant No 60676054.
