摘要
针对钝化层质量对高压VDMOS器件可靠性的影响做了研究。通过流片生产中的产品遇到的实际问题,分析了高压VDMOS器件的钝化层可能存在的离子或者受热应力对器件可靠性的不良影响,并在实际工艺和芯片设计上作出了相应的改进,流片验证可靠性得到了有效的改善。
This paper discusses the impact of the passivation layer quality on the reliability of high breakdown voltage VDMOS devices.According to failure samples of a high breakdown voltage VDMOS device during the engineering lots,it is found that the ions in the passivation layer and thermal stress may cause adverse effects on VDMOS devices.The proposed methods were taken in the later design and process flow to improve the devices reliability.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
2009年第3期465-468,共4页
Research & Progress of SSE
