摘要
随着MOSFET尺寸的不断减小,栅漏电流对器件特性的影响日益明显。栅漏电流噪声一方面影响器件性能,另一方面可用于栅介质质量表征,因此对其研究备受关注。由于栅介质噪声研究具有重要意义,文献中已经建立起各种各样的噪声模型,文中对其进行了归纳整理。在此基础上分析了各种模型的特性和局限性,进而探讨了其应用范围。
The impact of gate-leakage current on device characteristic becomes obvious with the continuous scaling of MOSFETs. The gate-leakage current noise affects the performance of the device, and also can be used as a tool to characterize the quality of gate oxide, and it therefore receives increasing attention. Because of the significance of gate dielectric noise study, various noise models have been presented. This paper makes a summary of them, analyzes the characteristic and limitations of each model and discusses their application.
出处
《电子科技》
2009年第10期53-55,共3页
Electronic Science and Technology
基金
国家部委"十一五"预研基金资助项目(51312060104)
西安应用材料创新基金资助项目(XA-AM-200603)
关键词
栅漏电流
栅介质
噪声模型
gate-leakage current
gate dielectric
noise model
