摘要
制作了结构为ITO/2T-NATA(20nm)/NPB(60nm)/Zn(BTZ)2∶Ir(DBQ)2(acac)(80nm)/Alq3(70nm)/LiF(1nm)/Al(200nm)的红光器件,其中2T-NATA是4,4′,4″-tris(N-(2-naphthyl)-N-phenyl-amino)-tri-phenylamine,NPB是N,N′-di(naphthalen-1-yl)-N,N′-diphenyl-benzidine,Zn(BTZ)2是Bis-(2-(2-hydroxyphe-nyl)benzothiazole)zinc,Ir(DBQ)2(acac)是iridiumcomplex,Alq3是tris(8-hydroxyquinolato)aluminum。基于Ir(DBQ)2(acac)掺杂的Zn(BTZ)2体系的器件给出最高电致发光(EL)性能。结果显示:10%Ir(DBQ)2-(acac)掺杂Zn(BTZ)2器件的亮度和效率分别为25000cd/m2和12cd/A,其相应的EL峰位于620nm,色坐标(x=0.63,y=0.37)。由于未使用激子阻挡层,所以,比通常磷光器件的制作工艺简单并且操作过程容易控制。
Full color display is the goal of organic light-emitting diodes （ OLED）, but the fabrication of stable red devices is the great barrier in the mass production of OLED. In order to use organic light-emitting diodes in displays,it is very important to obtain red light emitting with high efficiency. In this paper, a red phosphores- cent material is doped into different host materials by a structure of ITO /CuPc （20 nm）/NPB （60 nm）/ Zn （BTZ） 2 ： Ir （ DBQ ） 2 （ acac ） （ 80 nm ）/Alq3 （ 70 nm）/LiF （ 1 nm）/Al （ 200 nm ）. It was found that the device can achieve a brightness of 25 000 cd/m2, a current efficiency of 12 cd/A and the colour coordinates of （x =0.63,y =0.37）. Because there is no hole blocking layer, the device producing process would be simple.
出处
《发光学报》
EI
CAS
CSCD
北大核心
2009年第5期585-589,共5页
Chinese Journal of Luminescence
