摘要
以Zener模型为基础,考虑反铁磁性交换作用对DMS材料居里温度的影响,理论计算得到了居里温度关于掺杂浓度和反铁磁性交换作用的二元函数,对GaAs∶TM(Ga,TM)As(TM=Sc,Ti,V,Cr,Mn,Fe,Co,Ni)的居里温度做了详细分析得到:n型半导体居里温度有一个极大值,而p型掺杂是单调的递增。
Mixing small amount of the magnetic transition metal or rare earth metal ions in the non-magnetic semiconductor makes it show a certain degree of magnetism, forming the diluted magnetic semiconductors （DMS）. The introduction of one of the magnetic atoms, as known magnetic impurities, into the matrix as known the non-magnetic semiconductor. In this paper based on Zener model, considering the impact of the anti-ferromagnetic exchange on the Curie temperature of DMS materials, we got the function of the doping concentration and anti-ferromagnetic exchange about Curie temperature （To）. A detailed analysis on the Curie temperature of（ GaAS： TM）（ TM = Sc,Ti,V, Cr, Mn, Fe, Co, Ni） was carried out. A conclusion was drawn from the analysis. It follows： when x 〈 xo, T. increases with x ; when x = xo, T. reaches maxima ; when x 〉 x0, Tc always decreases with x increasing. At the same time the critical doping concentration xo decreases gradually with y, and Curie temperature Tc always is lower. For n-type doping cases, T is no longers a monotone function for the x, there is a maximum value only, however, for the p-type doping Tc displays a monotonous increase.
出处
《发光学报》
EI
CAS
CSCD
北大核心
2009年第5期702-705,共4页
Chinese Journal of Luminescence
基金
国家自然科学基金(10862002)
内蒙古工业大学基金(X200930)资助项目
关键词
稀磁半导体
居里温度
掺杂浓度
反铁磁性交换作用
diluted magnetic semiconductor
Curie temperature
dope concentration
anti-ferromagnetic exchange
