摘要
为了开发高导热低成本电子封装材料与器件,采用SPS方法制备了SiC/Cu复合材料,研究了SiC的粒径和体积分数对材料致密度和热导率的影响。结果表明:随着SiC体积分数的减少(从70%到50%),材料致密度逐渐提高;随着SiC粒径从40μm变化到14μm,材料的致密度提高。在材料未达到完全致密的情况下,材料的热导率主要受致密度的影响,SiC粒径的减小和体积分数的适宜降低对材料热导率的提高有利。此外,研究了对SiC进行化学镀铜对复合材料的影响。SiC化学镀铜改善了复合材料两相界面的润湿性,与未镀铜SiC相比,使样品相对密度提高了3%,热扩散系数提高了60%,热导率为167 W/(m.K)。
In order to develop electronic packaging materials with high thermal conductivity and lower cost, SiC/ copper composites were prepared by SPS, and the influences of SiC particle size and volume fraction on the density and thermal conductivity were investigated. The results indicate that the density of composites decrease as the volume fraction increasing from 50% to 70% and as the mean diameter of SiC increasing from 14μm to 40μm. The study also indicates that the thermal conductivity is influenced by density of composite and appropriate decrease of mean diameter and volume fraction of SiC is beneficial to increase of thermal conductivity. In addition, the method ot electro-less plating copper on the SiC particles was used to investigate the influence of the plated copper layer on the density and thermal conductivity of the composites. Electro-less plated copper on the SiC particles can improve the interfacial wettability between two phases. Compared with unplated SiC, the relative density is increased by 3% , thermal diffusion rate improved by 60% ,and thermal conductivity is 167W/（m · K）.
出处
《粉末冶金技术》
CAS
CSCD
北大核心
2009年第5期373-376,393,共5页
Powder Metallurgy Technology
基金
国家高技术发展计划项目(2008AA03Z505)
