摘要
在纯氮气气氛、衬底温度为20℃至370℃的条件下,分别在硅(100)和石英衬底上沉积氮化铝薄膜.原子力显微镜图片表明:在不同衬底温度制备的薄膜表面平滑,均方根粗糙度为2.2～13.2nm.X射线衍射图谱表明:可以在衬底温度为180°条件下沉积出具有c-轴择优取向的纤锌矿氮化铝薄膜,衬底温度的增加有利于薄膜结晶性的改善.由紫外-可见光透射谱计算得到薄膜折射率为1.80～1.85,膜厚约为1μm、光学能隙为6.1eV.
Aluminum nitride thin films were grown on Si（100） and quartz substrates using reactive magnetron sputtering deposition at the substrate temperatures from 20℃ to 370℃ in an ambient of pure nitrogen. The atomic force microscope images showed that the surfaces of the films deposited at different temperatures are smooth and the root mean square（RMS） roughnesses were from 2.2 to 13,2nm.The X-ray diffraction spectras showed that highly c-axis preferred wurtzite AlN films can be obtained at substrate temperature as low as 180℃ and the crystallizability of AlN was improved with increasing substrate temperature. Optical band gap （Eg=6.1eV）, refractive indexs （1.80-1.85） and thickness （about 1μm） of the film can be calculated and obtained by using the ultraviolet-visible optical transmission spectrum.
出处
《新疆大学学报（自然科学版）》
CAS
2009年第4期444-449,共6页
Journal of Xinjiang University(Natural Science Edition)
基金
国家自然科学基金资助项目(No.10864004
No.50862008)
新疆大学博士启动基金(No.BS080109
No.BS060110)
关键词
氮化铝
磁控反应溅射
择优取向
纯氮气
AlN
Magnetron reactive sputtering
Preferred orientation
Pure nitrogen
