摘要
0.8μm CMOS/SOI的模型参数提取是基于0.8μm CMOS/SOI工艺,选用HSPICE中的level 57模型。介绍了测试图形的设计经验,分析了SOI器件与体硅器件之间模型的差异,最后给出测试数据及参数测试结果的拟合情况。
The parameter extraction of 0.8μm CMOS/SOI model is based on 0.8μm CMOS/SOI technology,while using level 57 model of HSPICE,introducing the design experience of PCM,and making an analysis of the difference between SOI device and body silicon device.At last,the fitting conclusion of test data and parameter-testing result is drawn.
出处
《微处理机》
2009年第5期7-8,共2页
Microprocessors
