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V_2O_5添加对BaTi_4O_9微波介电陶瓷性能影响

THE EFFECTS ON DIELECTRIC PROPERTIES OF MICROWAVE DIELECTRIC CERAMICS WITH V_2O_5 ADDITIVES
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摘要 研究V2O5添加对BaTi4O9微波介电陶瓷的烧结性能及介电特性的影响,试验结果表明由于V2O5作为低熔点氧化物的烧结助剂可以有效降低烧结温度,同时由于V5+离子的价位抑制作用可使BaTi4O9微波介电陶瓷保持良好的介电特性,当添加量为1.0wt%、1200℃烧结时的介电特性为(2.5GHz):εr=41.4,tanδ=7×10-4,τf=50ppm/℃。 The effects of V2O5 on the sinterability and dielectric properties of BaTi4O9 ceramics were investigated. It was found that addition of the V2O5, as the sintering aids having low melting-point oxide, could reduce sintering temperature, and the BaTi4O9 microwave ceramics can keep good dielectric properties by the valence inhibition of V^5+. The experimental results indicates that with 1.0wt% additives and sintered at 1200V dielectric ceramic has a favorable dielectric property at ε r=41.4, tanδ =7× 10^-4, τ f=50ppm/℃ .
出处 《中国陶瓷》 CAS CSCD 北大核心 2009年第12期25-27,共3页 China Ceramics
关键词 BaTi4O9 V2O5 微波介质陶瓷 低温烧结 BaTi4O9, V2O5, Microwave Dielectric ceramics, low-temperature sintering
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