摘要
基于半导体激光器列阵的高斯光束,推导了外腔半导体激光器列阵锁相单元间的耦合系数,数值计算了侧模各单元间的耦合系数与外腔长度的关系.研究结果表明:同阶侧模各级次耦合系数的极大值随着耦合级次的增大而减少,并且其极大值所对应的腔长随着耦合级次的增大而增大;不同阶侧模同级次耦合系数的极大值所对应的腔长随着阶次的增大而减少.研究结果与已有的实验报道和理论分析相符.
Based on the Gaussian distribution of a diode laser array, we have deduced the expressions describing couplings, arising from the cell of a diode laser array （LDA）, which is positioned in an external cavity （EC）, and numerically calculated the relation between the lateral mode of coupling coefficients and the EC length. Results show that the maximum amplitude of coupling coefficients of the same rank lateral mode decreases with increasing coupling level and that the EC length corresponding to the maximum amplitude of coupling coefficient accrues as the coupling＇ level accrues. The maximum amplitude of coupling coefficient of different rank lateral modes with the same level decreases with accruing EC length. The results are in good agreement with experimental reports and theoretical analysis.
出处
《西南大学学报（自然科学版）》
CAS
CSCD
北大核心
2009年第11期32-36,共5页
Journal of Southwest University(Natural Science Edition)
基金
重庆市教委科技基金资助项目(KJ091307)
关键词
半导体激光器列阵
高斯光束
锁相
侧模
耦合系数
diode laser array
Gaussian optical beam
phase locking
lateral mode
coupling coefficient
