摘要
理论分析了p型波导层厚度对半导体激光器阈值电流、内损耗以及串联电阻的影响,优化得到该参数对器件电光转换效率的影响。由此设计了波导结构,并制作了波长为980nm非对称高效率半导体激光器。器件的光电特性测试为:腔长为1500μm,20%占空比的巴条的阈值电流以及串联电阻分别为7.3 A和4.8 mΩ,内损耗低至0.78 cm-1。微通道封装1 cm激光二极管列阵连续工作条件下最大电光转换效率为63.2%,相应的斜率效率和输出光功率分别为1.17 W/A和36.2 W,最大输出功率可达139.6 W。实验结果表明:通过优化p型波导层厚度,有效地提高器件电光转换效率。
The p-waveguide thickness which maximizes the quantum well diode lasers. The optimization are based on the power conversion efficiency （PCE） is optimized for simple models of the semiconductor laser＇s electrical and optical behaviors, including series resistance, threshold current and internal loss. The structure is designed and the device is fabricated experimentally. For a 1500μm cavity length and 20% fill factor devices, the threshold current and series resistance are 7. 3 A and 4.8 mΩ respectively, and a low internal loss around 0.78 cm^-1 is achieved. Under continuous wave operation condition, the maximal electro-optical conversion efficiency of the standard 1 cm laser bar with micro-channel cooler is 63.2 %. The corresponding slope efficiency and output power are 1.17 W/A and 36.2 W. The maximal output power is 139.6 W when the current is 161 A. The results prove that the way through optimizing the p-waveguide thickness is an efficient approach to improve.
出处
《光学学报》
EI
CAS
CSCD
北大核心
2009年第12期3419-3423,共5页
Acta Optica Sinica
基金
中国科学院知识创新工程青年人才领域前沿项目(ISCAS2008T12)资助课题
关键词
激光器
半导体激光器
电光转换效率
非对称宽波导
高功率
laser
semiconductor diode lasers
electro-optical conversion efficiency
asymmetric broad waveguide
high power
