摘要
以低压条形VUMOSFET单胞为例,系统分析VUMOSFET特征导通电阻(Ron)的各个构成部分。重点定性分析了特征导通电阻与器件的横向和纵向结构参数的关系。通过分析和仿真计算,得出条形VUMOSFET单胞设计的优化原则,并给出具体解析表达式。
With strip-shaped low voltage VUMOSFET cell as an example, characteristics of each component of on-resistance were analyzed systematically. The relationship between specific on-resistance and horizontal ＆ vertical structural parameters was qualitatively analyzed. Through analysis and simulation, strip-shaped gate structure of VUMOSFET cell was optimized.
出处
《微电子学》
CAS
CSCD
北大核心
2009年第6期861-863,共3页
Microelectronics
基金
沈阳市科技局专项科研资助项目(108186-2-00)
