期刊文献+

一种新型CMOS集成降压源IP模块的设计 被引量:2

Design of a New CMOS Integrated Drop-Out Voltage-Regulator IP Block
下载PDF
导出
摘要 目前很多热插拔接口芯片,采用低电压短沟道工艺,从5 V电压得到3.3 V和1.2 V电压的稳压器就成为芯片的一部分。稳压器主要由带隙基准(BGR)、缓冲器、局部电压镜像和全局电流镜像组成。利用Spectre对降压源仿真表明:不带负载功耗280μA;3.3 V输出偏差在3.5%内,负载电阻下限200Ω;1.2 V输出偏差在4%以内,负载电阻下限73.5Ω。该减压源IP模块采用0.13μm CMOS工艺实现,具有实用性。 Now a lot of hot pluggable IO interface chips are implemented on low-voltage short -channel IC process. An integrated drop-out voltage-regulator IP block, providing a solution of obtaining 3.3 V and 1.2 V from 5 V voltage source is a necessary part in the chips. The block is composed of Band-Gap-Reference(BGR), buffers, local voltage mirror and global current mirror. Simulation using Spectre indicates that the power dissipation is 280 μA without resistivity load; the 3.3 V output deviation is controlled within 3.5% and lower-limited load resistance is 200 12;the 1.2 V output deviation is controlled within 4% and lower-limited load resistance is 73. 5 ΩThe design of the block is implemented on the 0. 13μm CMOS process,having practical value.
作者 谢芳 戴庆元
出处 《电子器件》 CAS 2009年第6期1027-1030,共4页 Chinese Journal of Electron Devices
关键词 降压源 带隙基准 低功耗 共源输出 drop-out voltage regulator bandgap reference low power dissipation common source output
  • 相关文献

参考文献12

  • 1Lam Y, Ki W, A 0.9V 0.35 μm Adaptively Biased CMOS LDO Regulator with Fast Transient Response. ISSCC Dig. Tech. ,2008. 2:442-443.
  • 2Chaitanya K. Chava and Jose Silva .'Martinez, "A Frequency Compensation Scheme for LDO Voltage Regulators[J]. IEEE Transactions on Circuit and Systems. 2004.6.51 ( 6 ): 1041-1050.
  • 3Gabriel A. Rincon Mora, Phillip B. Alien. A Low Voltage, Low Quiescent Current, Low Drop Out Regulator[J]. IEEE Journal of Solid State Circuits, 1998.1.33( 1 ) : 36- 44.
  • 4Gupta V,Rine0n-Mora G A, A 5mA 0.6 μm CMOS Miller Compensated LDO Regulator with 27 dB Worst Case Pow er-Supply Rejection Using 60 pF of On- Chip Capacitance[R]. ISSCC Dig. Teeh. Papers,2007.2:520 -521.
  • 5Pual R, Gray,Pual J. Hurst,Stephen H. Lewis, etac. M-Analysis and Design of Analog Integrated Circuits (影印版)[M].第四版,北京,高等教育出版社.2002.3:331-332.
  • 6Behzad Razavi. M-Design of Analog CMOS Integrated Circuits[M].(影印版),清华大学出版社.2004.11:384-385.
  • 7Song B-S, Gray P R. A Precision Curvature-Compensated CMOS Bandgap Reference [J]. IEEE Journal of Solid State Circuits,1983. 10,SC-18:634 643.
  • 8Hurst P J. Exact Simulation of Feedback Circuit Parameter [J]. IEEE Trans. On Circuits and Systems, 1991.11, CAS-38 (11):1382- 1389.
  • 9Pretelli A,Richelli A, Colalongo L. and Kovacs Z M Vajna, Reduction of EM1 susceptibility in CMOS bandgap reference circuits[J]. IEEE Trans. , 2006.11,48(4 ) : 760-765.
  • 10Yeshwant Kamath B, Robert G. Meyer, etal. Relationship Between Frequency Response and Seuling Time of Operational Amplifiers[J]. IEEE Journal of Solid- State Circuits, 1974.10, SC-9: 347-352.

同被引文献10

引证文献2

二级引证文献23

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部