摘要
模拟分析了三种不同结构的双异质结扩展波长In0.78Ga0.22As PIN光电探测器在室温下的暗电流特性,并与器件的实际测量结果进行了比较和讨论。结果表明,对于扩展波长的探测器,零偏压附近暗电流主要为反向扩散电流,随着反向偏压增加,产生复合电流和欧姆电流逐渐起主要作用。在InAlAs/InGaAs异质界面处引入的数字递变超晶格以及外延初始生长的InP缓冲层能够有效地改善探测器的暗电流特性。
Dark current characteristics of three different types of double heterojunction wavelength-extended In0.78Ga0.22As PIN photodetectors at room temperature have been simulated and compared with experimental data. Results show that the dark currents are dominated by diffusion current in the vicinity of zero bias. With the increase of reverse bias, recombination current and ohmic current play an increasing leading role. The digital graded superlattices adopted at the InAlAs/InGaAs hetero-interfaces and the initiative InP buffer layer are effective for improving the dark current characteristics.
出处
《半导体光电》
CAS
CSCD
北大核心
2009年第6期807-810,822,共5页
Semiconductor Optoelectronics
基金
国家"973"计划项目(2006CB604903)
国家自然科学基金项目(60876034)
