摘要
用ＭＯＶＰＥ方法在蓝宝石衬底上生长了高纯氮化镓（ＧａＮ）外延材料。未掺杂ＧａＮ显ｎ型，室温下（３００Ｋ）背景电子浓度为１．６×１０１７ｃｍ－３，电子迁移率为３６０ｃｍ２／Ｖ．ｓ。在１９５Ｋ附近电子迁移率达到峰值，为４９０ｃｍ２／Ｖ．ｓ。发现了该材料中存在深施主能级，其离化能约为３８ｍｅＶ。
High Purity GaN films have been grown on sapphire substrate by MOVPE. The intrinsic GaN is n typed with background electron concentration 1.6×10 17 cm -3 and mobility 360 cm 2/V.s at room temperature. The highest mobility is 490 cm 2/V.s in the neighborhood of 195K. The deep donor with ionization energy about 38 meV is found in the films.
出处
《高技术通讯》
EI
CAS
CSCD
1998年第8期35-37,共3页
Chinese High Technology Letters
基金
863计划资助项目
