摘要
本文提出一种测量金属-半导体接触电阻率的方法——三点法。样品制备简单,无需台面绝缘,用硅进行实验验证,结果与文献报道的相符。实验表明接触电阻与接触半径在双对数座标中是一条斜率为“-2”的直线。
In this paper, a method to measure the specific contact resistance of M-S, three-point method is developed. This method eliminates the necessity for the mesa isolation of the contact pattern, thus simplifying the sample preparation. Our method has been verified by experiments in Si, and the results are in agreement with that of the method published in the literature. Our experiments show that the contact resistance versus the contact radius is a straight line with '-2' slope in the lograithmic coordinate.
出处
《南京大学学报（自然科学版）》
CAS
CSCD
1990年第3期409-414,共6页
Journal of Nanjing University（Natural Science）
关键词
IC
接触电阻率
电阻率
三点法
Specific contant resistance
Ohmic contact
circular transmission line model
