摘要
Ta2O5薄膜具有很好的电学性能和光学性能,制备方法种类繁多,如溶胶-凝胶法(Sol-gel)、化学气相沉积法、电子束蒸发技术、溅射法、Ta层阳极氧化或热氧化法、离子辅助沉积法(IBAD)、原子层沉积法(ALD)等。评述了现有各种制备方法的优缺点,综述了Ta2O5薄膜各种方法制备的条件、薄膜的功能性质等,并评析了金属有机化合物为前驱体制备性能优良的Ta2O5薄膜的前景。
Ta2O5 films possess good electrics properties and optics properties. Currently, the preparation methods are classified as sol-gel,CVD, ALD and so on, the merits and demerits of those methods are discussed, the controlling conditions of these fabrication methods and the as-synthesized film＇s properties are summarized. Finally, the prospect of using the metal-organic compound as precursor to prepare excellent performance Ta20s films is also introduced.
出处
《材料导报》
EI
CAS
CSCD
北大核心
2010年第1期25-30,共6页
Materials Reports
基金
国家自然科学基金(50804056)
中国博士后基金项目(20080431028)
关键词
TA2O5
薄膜
制备方法
Ta2O5, thin films, preparation method
