摘要
应用压组效应原理制作硅氧化物绝缘体(SOI)压力传感器,具有耐高温、抗辐射、稳定性好等优点,本文说明了SOI在微电子机械系统(MEMS)技术上的实现优势,并对压力传感器SOI结构的实现工艺进行了探索性试验,完成了SOI压力传感器的设计和封装,在强调了压力传感器的测试方法的同时,对所设计的样品进行了测试。
The SOI （Silicon On Insulator） pressure sensor based on the piezo-resistance effect has advantages of anti-high-temperature, anti-radiation and good stability. The advantages of MEMS SOI pressure sensor are indicated in this paper, and exploitative experiment is done in the fabricating technique of SOI silicon structure pressure chip. After SOI pressure sensor has been designed and encapsulated, some pressure sensor products are tested to obtain data with testing method emphasized.
出处
《传感器世界》
2010年第1期28-31,共4页
Sensor World
