摘要
介绍功率器件的发展情况,随后分析比较SJMOSFET与FS-IGBT两种器件的工作原理及其性能特征,SJMOS-FET具有高开关频率,导通电阻小,损耗低等优点。而FS-IGBT则具有通态压降低,无拖尾电流等优点,使得它们在性能上优于传统的功率MOSFET与IGBT。
In this paper,the development of power devices is fristly introduced ,and then the work principles and the charaeteristies of SJMOSFET and FS-IGBT are analyzed and compared.The SJMOSFET has the characteristics of high switch frequeney,low Ron,low losses and so on.While FS-IGBT has the advantages of low on-state voltage and not tail eurrent, made both of them beyond the conventional power MOSFET and IGBT.
出处
《电子设计工程》
2010年第2期118-120,共3页
Electronic Design Engineering
