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一种利用层错无损测量4H-SiC外延层厚度的方法

NONDESTRUCTIVE METHOD FOR MEASURING THE THICKNESS OF 4H-SiC EPITAXIAL LAYER BY STACKING FAULTS
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摘要 介绍了一种利用层错无损测量4H-SiC半导体材料外延层厚度的方法。该方法是根据4H-SiC同质外延生长中堆垛层错(stacking fault,SF)和外延层厚度的几何关系,通过测量在场发射扫描电子显微镜下观测到的SF沿[1100]方向边长的长度,计算出外延层厚度。与常用外延层厚度测量方法(红外干涉法)相比,这种无损测量方法更为简易精确。 A nondestructive method for measuring the thickness of the semiconductor material of 4H-SiC epitaxial layer by stacking faults was introduced.It is based on the characteristic of the relationship between the size of stacking faults （SF） and the thickness of epitaxial layer.The thickness of epitaxial layer can be calculated through measuring the length of SF at [1100] direction which is obtained by the field emission scanning electron microscopy.Compared to the infrared interference conventional measurement method of epitaxial layer thickness,such as infrared interference,this nondestructive measurement method is much more available and precise.
作者 苗瑞霞 张玉明 张义门 汤晓燕
机构地区 西安电子科技大学微电子学院
出处 《硅酸盐学报》 EI CAS CSCD 北大核心 2010年第2期183-186,共4页 Journal of The Chinese Ceramic Society
基金 国家自然科学基金重点项目(60876061) 西安应用材料创新基金(XA-AM-200704) 国防基金(9140A08050508)资助项目
关键词 堆垛层错 外延层厚度 无损测量 碳化硅 stacking faults thickness of epitaxial layer nondestructive measurement silicon carbide
分类号 O766.1 [理学—晶体学]
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参考文献9

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硅酸盐学报
2010年 第2期

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