摘要
介绍一种基于UMC0.6μmBCD工艺的低温漂高PSRR带隙电路。采用Brokaw带隙基准核结构,针对温度补偿和PSRR问题,通过改进的线性曲率补偿技术,对温度进行补偿;并利用零点技术提高电路的整体PSRR。HSPICE仿真分析表明:电路具有很好的高低频PSRR,在-40℃到125℃的温度范围内引入温度补偿后,温度系数降为3.7×10-6/℃。当电源电压从2.5V变化到5.5V时,带隙基准的输出电压变化约为670μV,最低工作电压仅为2.2V。
A novel Brokaw band-gap reference circuit was presented based on UMC＇s 0. 6μm BCD process. In the Brokaw bandgap reference core, an improved linear temperature curvature compensation technique was used for temperature compensation, and zeroing technique was introduced to improve the overall PSRR. HSPICE simulation results showed that the circuit had good PSRR in both high and low frequencies, and the temperature coefficient was reduced to 3.7×10^-6/℃ in -40℃-125℃ range. And the output voltage variation of bandgap reference was about 670/,V with supply voltage changing from 2.5 V to 5.5 V.
出处
《微电子学》
CAS
CSCD
北大核心
2010年第1期58-61,共4页
Microelectronics
基金
国家自然科学基金一中物院联合基金资助项目(10876029)
关键词
带隙基准源
线性补偿
电源抑制比
Bandgap voltage reference source
Linear compensation
PSRR
