期刊文献+

4,4,4-三氟-1-(4'-间三联苯基)-1,3-丁二酮邻菲咯啉铕(Ⅲ)配合物的合成与发光 被引量:3

Synthesis and Luminiescence of Eu(Ⅲ) Complex Based on 4,4,4-Trifluoro-1-(4'-m-Terphenyl)-1,3-Butanedione and 1,10-Phenanthroline
下载PDF
导出
摘要 合成了新的配合物EuL3phen,[HL=4,4,4-三氟-1-(4’-间三联苯基)-1,3-丁二酮,phen=邻菲咯啉]。采用元素分析,红外光谱,质谱对该配合物的结构进行了表征。该化合物在半导体InGaN芯片发出的近紫外光激发下,发出铕(Ⅲ)离子5D0—7FJ(J=0~4)跃迁特征红光,最大发射峰位于613 nm,发光量子效率为13%。配合物寿命为470μs,寿命曲线很好地和单指数衰减拟合曲线相吻合。配合物热稳定性达到220℃,满足制备LED器件的要求。将配合物EuL3phen和半导体395 nm发射InGaN芯片组合,成功地制备了红色发光二极管。发光二极管的色坐标、发光效率、配合物和硅胶质量比相关,在配合物和硅胶质量比为1∶25时,器件色坐标为x=0.64,y=0.35,光效为0.89 lm.W-1。该配合物是充当制作白光LED用的潜在的红色发光组分。 A new europium ( Ⅲ ) complex, EuL3 phen, [ HL = 4,4,4-trifluoro-]- (4 '-m-terphenyl)-1, 3-butanedione, phen = 1, 10-phenanthroline-] was synthesized. Its structure was characterized by elemental analysis, IR and FAB-MS. The complex exhibits strongly red emission due to the S D0-7FJ(J = 0-4) transitions of Eu^3+ ions under irradiation of UV or 395 nm emission light of InGaN chip. The strongest emission peak is located at 613 nm. The luminescence quantum yield is13%. The lifetime of the complex is 470 μs. The decay curve can be fit with a single exponential. The thermogravimetrie analyses eurve for the complex shows that the complex is stable up to 220 ℃, which meets the requirement of fabrication of LED deviee. A red luminescent LED was sueeessfully fabrieated by coating complex EuL3 phen onto 395 nm emitting InGaN chip. The mass ratio of complex to the silicone is related to the chromaticity coordinates and efficiency of fabricated LED. When the mass ratio of complex to the silicone is 1 : 25, the chromaticity coordinates of the fabricated LED with the europium complex are x=0. 64 and y=0. 35 and the efficiency achieves 0. 89 lm · W^-1. The results indicate that the complex may act as a potential red component in the fabrication of white LEDs.
出处 《光谱学与光谱分析》 SCIE EI CAS CSCD 北大核心 2010年第3期612-615,共4页 Spectroscopy and Spectral Analysis
基金 国家自然科学基金项目(50672136) 中国博士后基金项目(20080440785)资助
关键词 铕配合物 化学合成 荧光 发光二极管 Europium complex Chemical synthesis Fluorescent powder Luminescence
  • 相关文献

参考文献10

  • 1Nakamura S,Fasol G.The Blue Laser Diode:GaN Based Light Emitters and Lasers.Beilin Springer,1997.
  • 2Taguchi T.IEEE Transactions on Electrical and Eletronie Engineering,2008,3:21.
  • 3Lee K M,Cheah K M,An B L,et al.Appl.Phys.A,2005,80:337.
  • 4Kutty T,Nag A.Journal of Material Chemistry,2003,13:2211.
  • 5赵晓霞,王晓君,陈宝玖,孟庆裕,颜斌,狄卫华.白光LED用红色荧光粉α-Gd_2(MoO_4)_3∶Eu的制备及其发光性能研究[J].光谱学与光谱分析,2007,27(4):629-633. 被引量:28
  • 6He P,Wang H H,Liu S G,et al.J.Electrochem.Soc.,2009,156:E46.
  • 7He P,Wang H H,Liu S G,et al.Electrochem.Sol.Stat.Lett.,2009,12:B61.
  • 8Goodman H,Jr Lowy A.J.Am.Chem.Soc.,1938,60:2155.
  • 9Lin H,Wang X,Li C,et al.Spectrochimica Acta Part A,2007,61:1417.
  • 10Zhang L,Li B,Lei B,et al.J.Lumin.,2008,128:61.

二级参考文献15

  • 1刘晃清,秦伟平,张继森.ZrO_2中Eu^(3+)的发光特性[J].光谱学与光谱分析,2005,25(1):19-22. 被引量:12
  • 2Nakamura S,Senoh M,Iwasa S,et al.Jpn.J.Appl.Phys.Part 1,1995,34:L1332.
  • 3Wang J G,Jing X P,Yan C H.J.Electrochem.Soc.,2005,152(3):G186.
  • 4Hanlon A,Pattison P M,Kaeding J F,et al.Jpn.J.Appl.Phys.Part 1,2003,42:L628.
  • 5Sivakumar V,Varadarju U V.J.Electrochem.Soc.,2005,150(10):H168.
  • 6Nakamura S,Fasol G.The Blue Laser Diode:GaN Based Light Emitters and Lasers.Berlin,Springer,Barlin,1997.
  • 7Neeraj S,Kijima N,Cheetham A K.Solid State Comm.,2004,131;65.
  • 8Hu Y S,Zhuang W D,Ye H Q,et al.J.Alloys.Compd.,2005,390:226.
  • 9Kim J S,Jeon P E,Park Y H,et al.Appl.Phys.Lett.,2004,85(17):3696.
  • 10Kim J S,Jeon P E,Choi J C.Appl.Phys.Lett.,2004,84(15):2931.

共引文献27

同被引文献46

引证文献3

二级引证文献6

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部