摘要
介绍了超大规模集成电路中SiO2介质的化学机械抛光机理及抛光液在化学机械抛光中扮演的重要角色。通过单因素实验法,在低压力的实验环境下,着重分析了抛光液中表面活性剂、pH值调节剂、纳米磨料等成分在SiO2介质化学机械抛光中的具体作用及影响机理。最终得出,最优化的实验配比,即当表面活性剂的浓度为30mol/L,pH值为11.30,硅溶胶与去离子水的体积比为2:1时,在保证较低表面粗糙度的同时得到了较高的抛光速率476nm/min。
The critical role of chemical mechanical polishing （CMP） process fundamentals of SiO2 dielectric and the slurry effects were introduced. Through the single factor experiment, in low-pressure environment, the specific effects and the mechanism of the slurry components as surfactant, pH value regulator, nanometer-abrasive in SiO2 dielectric CMP were analyzed. The experiments proper removal rate （476 nm/min ） concentration is and surface 30 mol/L, the roughness are obtained, when the best experimental ratio： surfactant pH value is 11.30, the volume ratio of silica sol and de-lonized water is 2： I.
出处
《半导体技术》
CAS
CSCD
北大核心
2010年第3期252-255,共4页
Semiconductor Technology
关键词
化学机械抛光
SiO2介质
抛光液
抛光速率
表面粗糙度
chemical mechanical polishing （ CMP ）
SiO2 dielectric
CMP slurry
removal rate
surface roughness
